1 January 1987 Simulation Of Intrinsic Defects Related To The Ion Implantation Of InP Substrates
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Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943568
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Fast neutron irradiated InP substrate material reveals a new broad electron paramagnetic resonance singlet of 2750 G peak to peak linewidth, located at g = 2.28 ± 0.06, together with the expected anion antisite PIn spectrum. It is ascribed to a phosphorus vacancy Vp. Irradiated InP:Fe shows in addition a complex spectrum of Fe associated defects among which the Fe In-In i pairs aligned along 111 and 001 directions could be identified.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfred Goltzene, Alfred Goltzene, Bernard Meyer, Bernard Meyer, Claude Schwab, Claude Schwab, } "Simulation Of Intrinsic Defects Related To The Ion Implantation Of InP Substrates", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943568; https://doi.org/10.1117/12.943568
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