The Surface Recombination Velocity And The Diffusion Length On InGaAs p-i-n Photodiodes

Ichiro Tonai; Takashi Yano; Hiroshi Okuda

doi:10.1117/12.943576

1 January 1987 The Surface Recombination Velocity And The Diffusion Length On InGaAs p-i-n Photodiodes

Ichiro Tonai, Takashi Yano, Hiroshi Okuda

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943576
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Two basic parameters, the surface recombination velocity(S) and the diffusion length(Le), have been studied through investigating the responsivity of InGaAs p-i-n photodiodes without an InP window layer. The values of S and Le were found to be 10 4cm/s and 4μm, respectively. The high responsivity of 0.7A/W at λ=1.3μm was obtained without an antireflection coating due to the small surface recombination velocity.

Citation Download Citation

Ichiro Tonai, Takashi Yano, and Hiroshi Okuda "The Surface Recombination Velocity And The Diffusion Length On InGaAs p-i-n Photodiodes", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943576

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