The Use Of Cd0.7Hg0.3Te Grown On GaAs For Optical Fibre Communication Devices

L M Smith; J Thompson; G T Jenkin; T Nguyen Duy; P Gori

doi:10.1117/12.943591

1 January 1987 The Use Of Cd0.7Hg0.3Te Grown On GaAs For Optical Fibre Communication Devices

L M Smith, J Thompson, G T Jenkin, T Nguyen Duy, P Gori

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943591
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Cd0,7Hg0.3Te has been grown by MOCVD on GaAs in part of an optical fibre communication device study. Auto-doping from the substrate is contained in a suitable buffer layer and a thin HgTe layer has been used as the p-type contact. Preliminary device results are presented and are encouraging for future developments.

Citation Download Citation

L M Smith, J Thompson, G T Jenkin, T Nguyen Duy, and P Gori "The Use Of Cd0.7Hg0.3Te Grown On GaAs For Optical Fibre Communication Devices", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943591

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