Gallium Arsenide Integrated Optical Devices In Adverse Environments

G McWright; M Lowry; E Behymer; W Brazes; G Lancaster; F Roeske

doi:10.1117/12.965067

8 June 1988 Gallium Arsenide Integrated Optical Devices In Adverse Environments

G McWright, M Lowry, E Behymer, W Brazes, G Lancaster, F Roeske

Proceedings Volume 0867, Optical Devices in Adverse Environments; (1988) https://doi.org/10.1117/12.965067
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

We discuss preliminary measurements of the response of gallium arsenide integrated optical waveguides to radiation from a Febetron. The Febetron produces electrons in the 300-700 keV rangelA in approximately 3-ns FWHM pulses, with a maximum dose rate of approximately 10 rad/sec. "Prompt" radiation effects were monitored on a streak camera recording system.

Citation Download Citation

G McWright, M Lowry, E Behymer, W Brazes, G Lancaster, and F Roeske "Gallium Arsenide Integrated Optical Devices In Adverse Environments", Proc. SPIE 0867, Optical Devices in Adverse Environments, (8 June 1988); https://doi.org/10.1117/12.965067

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