8 June 1988 Silicon Optoelectronic Components Behaviour Under Pulsed Gamma Irradiation.
Author Affiliations +
Proceedings Volume 0867, Optical Devices in Adverse Environments; (1988) https://doi.org/10.1117/12.965070
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The radiation sensitivity of several silicon optoelectronic sensors (photodiodes, linear arrays, CCD) has been measured under pulsed gamma irradiation. The transient effects are presented as a function of both dose and dose rate .
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S Ravary, F Pupat, "Silicon Optoelectronic Components Behaviour Under Pulsed Gamma Irradiation.", Proc. SPIE 0867, Optical Devices in Adverse Environments, (8 June 1988); doi: 10.1117/12.965070; https://doi.org/10.1117/12.965070
PROCEEDINGS
5 PAGES


SHARE
Back to Top