The radiation sensitivity of several silicon optoelectronic sensors (photodiodes, linear arrays, CCD) has been measured under pulsed gamma irradiation. The transient effects are presented as a function of both dose and dose rate .
S Ravary, S Ravary,
F Pupat, F Pupat,
"Silicon Optoelectronic Components Behaviour Under Pulsed Gamma Irradiation.", Proc. SPIE 0867, Optical Devices in Adverse Environments, (8 June 1988); doi: 10.1117/12.965070; https://doi.org/10.1117/12.965070