13 April 1988 Characterization Of Direct Readout Si:Sb And Si:Ga Infrared Detector Arrays For Space-Based Astronomy
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Proceedings Volume 0868, Optoelectronic Technologies for Remote Sensing from Space; (1988) https://doi.org/10.1117/12.943602
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Preliminary test results from the evaluation of Si:Sb and Si:Ga 58 x 62 element infrared detector arrays are presented. These devices are being characterized under background conditions and readout rates representative of operation in orbiting cryogenically-cooled infrared observatories. The arrays are hybridized to silicon direct readout multiplexers which allow random-access and non-destructive readout. Array performance optimization is being conducted with a flexible microcomputer-based drive and readout electronics system. Preliminary Si:Sb measurements indicate a sense node capacitance of 0.06 pF, peak (28 μm) responsivity >3 A/W at 2V bias, read noise of 130 rms e-, dark current ~10 e-/s, and a well capacity >105e-. The limited test data available on the performance of the Si:Ga array are also discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark E. McKelvey, Craig R. McCreight, John H. Goebel, Nicolas N. Moss, Maureen L. Savage, "Characterization Of Direct Readout Si:Sb And Si:Ga Infrared Detector Arrays For Space-Based Astronomy", Proc. SPIE 0868, Optoelectronic Technologies for Remote Sensing from Space, (13 April 1988); doi: 10.1117/12.943602; https://doi.org/10.1117/12.943602
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