SiC-UV-Photodetectors

P. Glasow; G. Ziegler; W. Suttrop; G. Pensl; R. Helbig

doi:10.1117/12.943598

13 April 1988 SiC-UV-Photodetectors

P. Glasow, G. Ziegler, W. Suttrop, G. Pensl, R. Helbig

Proceedings Volume 0868, Optoelectronic Technologies for Remote Sensing from Space; (1988) https://doi.org/10.1117/12.943598
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

UV-photodiodes were fabricated by N-implantation in p-type 6H-SiC epitaxial layers grown on monocrystalline substrates. I-V characteristics (at 296-826 K) and spectral quantum efficiencies (at 295-673 K) are measured to characterize the photodiodes. Maximum quantum efficiences of 75% are observed at wavelengths around 280 nm. This means, that the diffusion length of the electron must be greater than 1 μm. From an analysis of the long wavelength cut-off, the band-gap energy and the temperature coefficient of the band-gap energy are determined.

Citation Download Citation

P. Glasow, G. Ziegler, W. Suttrop, G. Pensl, and R. Helbig "SiC-UV-Photodetectors", Proc. SPIE 0868, Optoelectronic Technologies for Remote Sensing from Space, (13 April 1988); https://doi.org/10.1117/12.943598

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