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13 April 1988 SiC-UV-Photodetectors
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Proceedings Volume 0868, Optoelectronic Technologies for Remote Sensing from Space; (1988) https://doi.org/10.1117/12.943598
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
UV-photodiodes were fabricated by N-implantation in p-type 6H-SiC epitaxial layers grown on monocrystalline substrates. I-V characteristics (at 296-826 K) and spectral quantum efficiencies (at 295-673 K) are measured to characterize the photodiodes. Maximum quantum efficiences of 75% are observed at wavelengths around 280 nm. This means, that the diffusion length of the electron must be greater than 1 μm. From an analysis of the long wavelength cut-off, the band-gap energy and the temperature coefficient of the band-gap energy are determined.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Glasow, G. Ziegler, W. Suttrop, G. Pensl, and R. Helbig "SiC-UV-Photodetectors", Proc. SPIE 0868, Optoelectronic Technologies for Remote Sensing from Space, (13 April 1988); https://doi.org/10.1117/12.943598
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