31 March 1988 Gallium Arsenide Based Integrated Optoelectronic Circuits
Author Affiliations +
Proceedings Volume 0869, Technologies for Optoelectronics; (1988) https://doi.org/10.1117/12.943613
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Integrated optoelectronic circuits consists of monolithically integrating high speed electronics with photonic devices such as light emitters and photodetectors on a common substrate. Requirements for optoelectronic integration are being driven by the needs of optical interconnects, optical communication, and optical computing and signal processing. During the past few years significant progress in this technology has been realized due to improvements in material growth, device processing and digital GaAs integrated circuit development. This paper will present a state-of-the-art review of this technology, its application to high speed systems and make projections for future developments.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L D Hutcheson, L D Hutcheson, } "Gallium Arsenide Based Integrated Optoelectronic Circuits", Proc. SPIE 0869, Technologies for Optoelectronics, (31 March 1988); doi: 10.1117/12.943613; https://doi.org/10.1117/12.943613
PROCEEDINGS
11 PAGES


SHARE
RELATED CONTENT

Laser range finding techniques in the sensing of 3 D...
Proceedings of SPIE (January 01 1990)
Integrated Optoelectronic Transmitter
Proceedings of SPIE (November 30 1983)
Integrated Optoelectronic Logic
Proceedings of SPIE (May 10 1984)
Materials Requirements For GaAs For Optoelectronic Applications
Proceedings of SPIE (September 26 1984)
Design of low-noise wide-dynamic-range GaAs optical preamps
Proceedings of SPIE (November 01 1991)

Back to Top