31 March 1988 Gallium Arsenide Based Integrated Optoelectronic Circuits
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Proceedings Volume 0869, Technologies for Optoelectronics; (1988) https://doi.org/10.1117/12.943613
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Integrated optoelectronic circuits consists of monolithically integrating high speed electronics with photonic devices such as light emitters and photodetectors on a common substrate. Requirements for optoelectronic integration are being driven by the needs of optical interconnects, optical communication, and optical computing and signal processing. During the past few years significant progress in this technology has been realized due to improvements in material growth, device processing and digital GaAs integrated circuit development. This paper will present a state-of-the-art review of this technology, its application to high speed systems and make projections for future developments.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L D Hutcheson, L D Hutcheson, } "Gallium Arsenide Based Integrated Optoelectronic Circuits", Proc. SPIE 0869, Technologies for Optoelectronics, (31 March 1988); doi: 10.1117/12.943613; https://doi.org/10.1117/12.943613

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