Paper
31 March 1988 Novel Heterostructure Devices For Electronics And Optoelectronics
Claude Weisbuch
Author Affiliations +
Proceedings Volume 0869, Technologies for Optoelectronics; (1988) https://doi.org/10.1117/12.943620
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The recent progress in semiconductor heterostructure devices is reviewed. The field of electronic devices, while relying on rather mature concepts, is evidencing progress towards the intrinsic materials and structure performance. This is due to progress in technological manufacturing steps allowing device miniaturization and optimization. The field of optoelectronic devices relies on newer, more fundamental concepts modifications and witnesses the emergence of materials with unsurpassed performances. These are fundamentally based on low-dimensional physical concepts.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Claude Weisbuch "Novel Heterostructure Devices For Electronics And Optoelectronics", Proc. SPIE 0869, Technologies for Optoelectronics, (31 March 1988); https://doi.org/10.1117/12.943620
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum wells

Excitons

Heterojunctions

Field effect transistors

Transistors

Optoelectronics

Gallium arsenide

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