6 April 1988 A High Density Anodized Aluminum Microstrip Structure For High Speed Interconnections
Author Affiliations +
Proceedings Volume 0871, Space Structures, Power, and Power Conditioning; (1988) https://doi.org/10.1117/12.943669
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
A new interconnect structure formed by the selective anodization of aluminum thin films is examined. Interconnect lines of aluminum embedded in anodic aluminum oxide dielectric were fabricated. Resistivity of the lines was determined to be - 3.1 μΩcm. This value compares well to the bulk value of 2.8 μΩ.cm Crosstalk is expected to be < 10%.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. C. Dillard, W. C. Dillard, J. L. Davidson, J. L. Davidson, R. C. Jaeger, R. C. Jaeger, } "A High Density Anodized Aluminum Microstrip Structure For High Speed Interconnections", Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); doi: 10.1117/12.943669; https://doi.org/10.1117/12.943669
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

Review of the state of the art measurements for and...
Proceedings of SPIE (May 26 1996)
The thermal conductivity of alumina thin film for LED
Proceedings of SPIE (August 20 2009)
Paper field effect transistor
Proceedings of SPIE (February 12 2009)

Back to Top