6 April 1988 Semiconductor-Metal Eutectic Composites For High-Power Switching
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Proceedings Volume 0871, Space Structures, Power, and Power Conditioning; (1988) https://doi.org/10.1117/12.943644
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
A novel electronic material, a Si-TaSi2 semiconductor-metal eutectic composite, offers promise in high-power switching applications. In this paper, the basic electronic properties of the material are briefly described. It is shown that the in situ Schottky junctions inherent to the material can be used to fabricate transistors. The advantages of these devices are their volumetric current transport and their unusual resistance to avalanche breakdown.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. M. Ditchek, B. G. Yacobi, "Semiconductor-Metal Eutectic Composites For High-Power Switching", Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); doi: 10.1117/12.943644; https://doi.org/10.1117/12.943644

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