Diamond Synthesis By Hollow Cathode Plasma Assisted Chemical Vapor Deposition

B. Singh; O R Mesker; A W Levine; Y Arie

doi:10.1117/12.943942

18 May 1988 Diamond Synthesis By Hollow Cathode Plasma Assisted Chemical Vapor Deposition

B. Singh, O R Mesker, A W Levine, Y Arie

Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988) https://doi.org/10.1117/12.943942
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

A method which combines thermal and plasma dissociation of a methane/hydrogen gas mixture for low pressure chemical vapor deposition of diamond is described. A hot, thin-walled, refractory metal cathode is used to generate a high-current, low-voltage discharge. The substrates are located on the anode and immersed in the plasma emanating from the cathode tip. No auxiliary substrate heating is employed. Polycrystalline diamond particles and films are obtained on silicon (100) and molybdenum substrates at growth rates of 1-3 μm/hour. Data on the effects on diamond growth of the various pro-cess parameters along with some operating characteristics of the hollow cathode are presented.

Citation Download Citation

B. Singh, O R Mesker, A W Levine, and Y Arie "Diamond Synthesis By Hollow Cathode Plasma Assisted Chemical Vapor Deposition", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); https://doi.org/10.1117/12.943942

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