18 May 1988 Electrical Characteristics Of MBE-Grown GaAs1-Sbx On InP And Correlation With Film Microstructure
Author Affiliations +
Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988) https://doi.org/10.1117/12.943937
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
GaAs 0.5 Sb 0.5 grown on InP by molecular beam epitaxy (MBE) has been characterized by .. transmission electron microscopy and variable temperature Hall measuremts 0 Unintentionally doped layers are p-type with measured hole concentrations of 1-3 x 10 16 cm-3 at 300K. The behavior of the Hall coefficient as a function of temperature is found to be well-described in the temperature range 30K<T<300K by a two-acceptor model. Intentional Si doping of the GaAs ,Sbn layers leads to relatively uncompensated p-type conductivity. Hole mobilities in these njers are generally less than 100 cm /Vs at 300K as a result of compositional fluctuations which result from the metastable nature of these films. In addition, hole mobilities are anisotropic and reflect an unusual asymmetry in the film microstructure which can be observed by transmission electron microscopy.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J Klem, J Klem, J I Chyi, J I Chyi, H Morkoc, H Morkoc, Y E Ihm, Y E Ihm, N Otsuka, N Otsuka, } "Electrical Characteristics Of MBE-Grown GaAs1-Sbx On InP And Correlation With Film Microstructure", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943937; https://doi.org/10.1117/12.943937

Back to Top