18 May 1988 Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography
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Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988); doi: 10.1117/12.943938
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Partially relaxed GaInAs layers grown on (001) GaAs substrates by Metalorganic Chemical Vapor Deposition are studied using x-ray rocking curve (XRC) and double crystal topography, energy dispersive x-ray analysis (EDAX), and Nomarski phase contrast microscopy. Epilayers of 1 - 7 gm thickness are grown on various buffer layers. Epilayers grown on a plain GaAs buffer layer and on a graded GaInAs buffer layer contain many line defects (LD) and show cross-hatched patterns on the surface. The layer grown on a strained layer superlattice buffer layer is free of LD's and of the cross-hatched patterns. All the layers are relaxed by differing amounts along the two <110> directions. The XRC and EDAX measurements of the ternary layer compositions agree reasonably well. The mean spacing of misfit dislocations from XRC and the LD spacing from topography agree in the order of magnitude with the electron microscopy measurements by others. The XRC data on x-ray strain, elastic strain, and the misorientation angle between the epilayer and substrate are also presented.
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Chu R Wie, H M Kim, K M Lau, "Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943938; https://doi.org/10.1117/12.943938
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KEYWORDS
X-rays

Laser sintering

Gallium arsenide

Interfaces

Crystals

Photomicroscopy

Metalorganic chemical vapor deposition

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