18 May 1988 Optical Characterization Of GaAs1-xSbx And GaAs1-xSbx/GaAs Strained Layer Superlattices
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Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988) https://doi.org/10.1117/12.943936
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Molecular beam epitaxy has been used to grow both GaAs, ,Sb films lattice-matched to InP and GaAsi_ Sb /GaAs strained layer superlattices oh.6aArgubstrates. Films grown on InP substrates are ofa composition inside the well-known solid-phase miscibility gap for this alloy. Because these films are metastable, they exhibit an unusual microstructure which includes both ordering and clustering effects. Nevertheless, we have obtained low-temperature photoluminescence linewidths of under 8 meV. This represents the best linewidth for this material reported to date. Correlations between film microstructure and the optical quality of these alloys have been observed. Strained layer GaAsi_xSb /GaAs superlattices grown on GaAs substrates have been characterized by x-ray di3i'fraction, photoluminescence, optical absorption, and photoreflectance. Structural parameters as determined by x-ray diffraction have been used in an envelope function superlattice band structure model to estimate the band offsets and indicate that the superlattices are Type II, with a large valence band discontinuity.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J F Klem, J F Klem, D Huang, D Huang, H Morkoc, H Morkoc, Y E Ihm, Y E Ihm, N Otsuka, N Otsuka, } "Optical Characterization Of GaAs1-xSbx And GaAs1-xSbx/GaAs Strained Layer Superlattices", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943936; https://doi.org/10.1117/12.943936

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