3 May 1988 Free-Carrier Induced Optical Nonlinearities In Semiconductors
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Proceedings Volume 0878, Multifunctional Materials; (1988) https://doi.org/10.1117/12.943956
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
HgTe and zero-gap HgCdTe have record, picosecond speed, optical nonlinearities at 10.6μ. They are caused by carrier temperature modulation, which produces large carrier density variations in zero-gap materials. The thermal process is only beginning to saturate at 1 MW/cm2; at that intensity , the dielectric constant of HgTe is modulated by about 10%. Further enhancement of these nonlinearities may be achieved with suitable doping or alloying.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. A. Wolff, S. Y. Yuen, K. A. Harris, J. W. Cook, J. F. Schetzina, "Free-Carrier Induced Optical Nonlinearities In Semiconductors", Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); doi: 10.1117/12.943956; https://doi.org/10.1117/12.943956
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