3 May 1988 Free-Carrier Induced Optical Nonlinearities In Semiconductors
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Proceedings Volume 0878, Multifunctional Materials; (1988) https://doi.org/10.1117/12.943956
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
HgTe and zero-gap HgCdTe have record, picosecond speed, optical nonlinearities at 10.6μ. They are caused by carrier temperature modulation, which produces large carrier density variations in zero-gap materials. The thermal process is only beginning to saturate at 1 MW/cm2; at that intensity , the dielectric constant of HgTe is modulated by about 10%. Further enhancement of these nonlinearities may be achieved with suitable doping or alloying.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. A. Wolff, P. A. Wolff, S. Y. Yuen, S. Y. Yuen, K. A. Harris, K. A. Harris, J. W. Cook, J. W. Cook, J. F. Schetzina, J. F. Schetzina, } "Free-Carrier Induced Optical Nonlinearities In Semiconductors", Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); doi: 10.1117/12.943956; https://doi.org/10.1117/12.943956


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