3 May 1988 Molecular Beam Epitaxy Studies Of α-Sn/CdTe Superlattices
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Proceedings Volume 0878, Multifunctional Materials; (1988) https://doi.org/10.1117/12.943953
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Angular-resolved synchrotron radiation photoemission spectroscopy and reflection high energy electron diffraction (RHEED) are used to study the MBE growth and the thermal stability of α-Sn/CdTe(110) and CdTe/α-Sn(110) interfaces. Both interfaces are found to be stable, nonreactive, and abrupt for growth temperatures up to 100 C. At the α-Sn/CdTe interface we measured a valence band offset of ΔEv = 1.1eV. Shifts in the Sn4d core level and valence band spectra suggest a bandgap in a 50 monolayer (ML) thick α-Sn film of at least ΔEg ≥ 200meV. Stable superlattices of α-Sn/CdTe(110) have been grown at 100 C. The surface quality of the superstructure degrades after the growth of several α-Sn/CdTe periods. After the growth of 10 periods each 50 ML thick, the RHEED pattern shows mainly three dimensional bulk diffraction, indicating increased surface and interface roughness.
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Hartmut Hochst, Hartmut Hochst, David W. Niles, David W. Niles, Isaac Hernandez-Calderon, Isaac Hernandez-Calderon, "Molecular Beam Epitaxy Studies Of α-Sn/CdTe Superlattices", Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); doi: 10.1117/12.943953; https://doi.org/10.1117/12.943953

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