3 May 1988 The Investigation Of Type III-Type I Strained-Layer Superlattice System: Hg1-xZnxTe-CdTe
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Proceedings Volume 0878, Multifunctional Materials; (1988) https://doi.org/10.1117/12.943954
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
We report here the results of Hgl-xZnxTe-CdTe strained-layer superlattices grown by MBE. This superlattice system has been chosen in order to investigate the effect of the strain in Type III and Type I superlattices. Hgl-xZnxTe-CdTe superlattices with different strain have been grown on CdTe(111)B/GaAs(100) and CdTe(100)/GaAs(100) substrates and characterized in situ by electron diffraction and ex situ by X-ray diffraction, infrared transmission and Hall measurements. The high quality of Hgl-xZnxTe-CdTe super-lattices is attested by the presence of satellite peaks in the X-ray spectra. The values of hole mobilities between 5x103 up to 2x104cm2v-ls-1 at T-23K along (111)B growth orientation and up to 4.9x104cm2v-1s-1 at 5K along (100) growth orientation are obtained for Type III superlattices whereas in Type I superlattices hole mobility is between 200-300cm2v-ls-1. Hg1-xZnxTe-CdTe superlattices with n-type character have also been obtained. A p- to n-type transition is observed when increasing HgZnTe layer thickness and/or decreasing CdTe layer thickness. Electron mobilities as high as 2.5x10-5cm2v-ls-1 have been reached.
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X. Chu, S. Sivananthan, J. P. Faurie, "The Investigation Of Type III-Type I Strained-Layer Superlattice System: Hg1-xZnxTe-CdTe", Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); doi: 10.1117/12.943954; https://doi.org/10.1117/12.943954
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