3 May 1988 Computer Simulations Of Transient Operation Of Gaas Etalons
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Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944061
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Time-dependent behavior of GaAs nonlinear Fabry-Perot etalons has been investigated with a computer model using the Banyai-Koch plasma theory for the GaAs nonlinear optical properties. Investigation of single-wavelength transient operation of GaAs etalons as optical logic gates has shown that useful differential energy gain is not achievable for optical pulses shorter than about ten times the charge carrier lifetime in the semiconductor.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M E Warren, M E Warren, D Richardson, D Richardson, S W Koch, S W Koch, H M Gibbs, H M Gibbs, } "Computer Simulations Of Transient Operation Of Gaas Etalons", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944061; https://doi.org/10.1117/12.944061
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