3 May 1988 Determination Of The Third Order Nonlinearity As A Function Of Quantum Well Width In Gaas/A1Gaas Multiple Quantum Wells
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Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944072
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
We present a study of the dependence of the magnitude of optical nonlinearities of GaAs/AlGaAs multiple quantum wells on quantum well thickness. Using four-wave mixing and nonlinear absorption measurements the refractive nonlinearity was determined in 17 samples grown by MOCVD and MBE. We find a small variation (less tban a factor of three) in the change in refractive index per photoexcited carrier for well sizes between 50 A and 300 A. or bulk GaAs.
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M W Derstine, M W Derstine, D E Grider, D E Grider, J A Lehman, J A Lehman, P P Ruden, P P Ruden, Nasser Peyghambarian, Nasser Peyghambarian, } "Determination Of The Third Order Nonlinearity As A Function Of Quantum Well Width In Gaas/A1Gaas Multiple Quantum Wells", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944072; https://doi.org/10.1117/12.944072
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