3 May 1988 Nonlinear Measurements In Multiple Quantum Wells Of Gaas/Algaas Fabricated By Mocvd
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Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944071
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
We discuss the saturation intensities and saturation densities as a function of well width for the room temperature excitonic absorption resonance of GaAs/A1GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. The optimum growth temperature is considered. We discuss techniques for calculating absorption coefficients that remove Fabry-Perot effects as well as the effects of carrier diffusion. The difference between pulsed and CW excitation of the mutliple quantum wells is addressed. We discuss the calculation of the nonlinear index of refraction from a discrete set of absorption data. We introduce a new structure (a hetero n-i-p-i) which combines the advantages of multiple quantum wells and doping superlattices.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A Kost, A Kost, M Kawase, M Kawase, E Garmire, E Garmire, H C Lee, H C Lee, A Danner, A Danner, A Hariz, A Hariz, P D Dapkus, P D Dapkus, "Nonlinear Measurements In Multiple Quantum Wells Of Gaas/Algaas Fabricated By Mocvd", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944071; https://doi.org/10.1117/12.944071

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