3 May 1988 Optically Induced Index Of Refraction Changes In Gallium Arsenide Doping Superlattices
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Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944067
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Changes in the reflection and transmission spectra of GaAs doping superlattices due to optical excitation of carriers are measured. Modulated transmission and reflection spectra show that both the real and imaginary parts of the complex refractive index are affected in the spectral region near and below the GaAs band gap. Modulated transmission measurements of 1064-nm light through a 1-mm-long waveguide sample show significant modulation at room temperature. In the sample studied, large below-gap absorption was observed which could not be reduced by optical excitation. We associate this absorption with an impurity or trap level located approximately 200 meV below the GaAs band gap.
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T B Simpson, C A Pennise, J D Bruno, M S Tobin, M Dutta, "Optically Induced Index Of Refraction Changes In Gallium Arsenide Doping Superlattices", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944067; https://doi.org/10.1117/12.944067
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