3 May 1988 Theory Of Optical Semiconductor Nonlinearities
Author Affiliations +
Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944068
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
The origine of the nonlinear optical properties of semiconductors are discussed. We treat in detail 3 examples for electronic mechanisms: a) induced exciton absorption due to dynamical line-broadening; b) the band-edge nonlinearities due to plasma band-filling, screening, and renormalization; and c) the coherent band-edge nonlinearities for ultra-short pulse excitation.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H Haug, H Haug, } "Theory Of Optical Semiconductor Nonlinearities", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944068; https://doi.org/10.1117/12.944068
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT

Optical nonlinearities in semiconductors
Proceedings of SPIE (November 08 1999)
Optical nonlinearities in semiconductors
Proceedings of SPIE (November 11 1999)
Optical nonlinearities in semiconductors
Proceedings of SPIE (November 10 1999)
Large, Fast, Free-Electron-Induced Optical Nonlinearities
Proceedings of SPIE (January 03 1990)
Optical linearities in semiconductors
Proceedings of SPIE (November 03 1999)

Back to Top