2 May 1988 High-Power 0.87µm Channel Substrate Planar Lasers For Spaceborne Communications
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Proceedings Volume 0885, Free-Space Laser Communication Technologies; (1988) https://doi.org/10.1117/12.976557
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
High-power single mode channeled-substrate-planar AlGaAs diode lasers are being developed for reliable, high-power operation for use as sources in spaceborne optical communications systems. Most work on AlGaAs semiconductor lasers has been focused on devices with an emission wavelengths less than 8400A where both high power and reliable operation have been previously demonstrated. In spaceborne communication systems, the output wavelength is optimized at 8700A to avoid absorption of the emitted light by the atmosphere when communicating with ground-based terminals. The CSP laser structure has been optimized for operation at an emission wavelength of 8700A. Such devices have exhibited output powers in excess of 80 mW cw at an operating temperature of 80 C. Single spatial mode and substantially single longitudinal mode operation has been obtained at output powers greater than 50 mW cw and 100 mW (50% duty-cycle). The phase-front of the high-power devices has been examined and has shown rms aberrations to be≈ λ/50. Lifetesting of these devices at 50mW (50% duty-cycle) has shown reliable operation in excess of 5,000 hrs.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. C. Connolly, J. C. Connolly, T. R. Stewart, T. R. Stewart, D. B. Gilbert, D. B. Gilbert, S. E. Slavin, S. E. Slavin, D. B. Carlin, D. B. Carlin, M. Ettenberg, M. Ettenberg, } "High-Power 0.87µm Channel Substrate Planar Lasers For Spaceborne Communications", Proc. SPIE 0885, Free-Space Laser Communication Technologies, (2 May 1988); doi: 10.1117/12.976557; https://doi.org/10.1117/12.976557

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