12 April 1988 GaAs Circuits For Monolithic Optical Controller
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Proceedings Volume 0886, Optoelectronic Signal Processing for Phased-Array Antennas; (1988) https://doi.org/10.1117/12.944183
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
GaAs circuits for use in a fully monolithic 1 Gb/s optical controller have been developed and tested. The circuits include photodetectors, transimpedence amplifiers and 1:16 demultiplexers that can directly control the phase of MMIC phase shifters. The entire chip contains approximately 300 self-aligned gate E/D-mode MESFETs. The MESFETs have one micron-wide gate and the E-mode FETs typically have transconductance of 200 ms/mm. Results of simulations and tests are reported. Also, the design and layout of the fully monolithic chip is discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G Gustafson, G Gustafson, M Bendett, M Bendett, J Carney, J Carney, R Mactaggart, R Mactaggart, S Palmquist, S Palmquist, F Schmit, F Schmit, K Tan, K Tan, W Walters, W Walters, "GaAs Circuits For Monolithic Optical Controller", Proc. SPIE 0886, Optoelectronic Signal Processing for Phased-Array Antennas, (12 April 1988); doi: 10.1117/12.944183; https://doi.org/10.1117/12.944183


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