9 August 1988 Designs For High Power, Single Mode Operation In Broad Stripe Semiconductor Lasers
Author Affiliations +
Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944350
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
TWo methods are describrd in this paper to obtain high power in a single lateral mode operation in a broad stripe semiconductor laser. (1) Antiguiding index profile-solution to the wave equation for a one-dimensional, quadratic variation in the complex refractive index profile are used to calculate the optical gain and the intensity profile of the lateral modes of broad-stripe semiconductor lasers. A large gain difference between the fundamental mode and higher order modes is obtained in profiles with strong real-index antiguiding and weak gain-guiding. A criterion for comparing the tendency for single mode operation is introduced and applied to quadratic, step, and array profiles. (2) Variable facet reflectance-the reflectance at the facets of a wide stripe laser is made to vary spatially across the width of the stripe. It is found that the gain differences between the fundamental mode and higher order modes can be greatly increased. Several reflectance profiles are examined and the results are campared using the same criterion as in method (1).
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A K Chan, A K Chan, H F Taylor, H F Taylor, C P Lai, C P Lai, } "Designs For High Power, Single Mode Operation In Broad Stripe Semiconductor Lasers", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944350; https://doi.org/10.1117/12.944350
PROCEEDINGS
10 PAGES


SHARE
Back to Top