Paper
9 August 1988 Progress In Single Quantum Well Structures For High Power Laser Device Applications
R G Waters, P L Tihanyi, D S Hill, B A Soltz
Author Affiliations +
Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944363
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Recent advances made in our laboratory toward performance optimization of (A1)GaAs quantum well lasers are described. Topics to he covered include: laser reliability for broad-area devices emitting less than 300mW and its relation to the epitaxial structure and operating current density; parametric crystal growth studies and the implications for device efficiency; realization of 57% cw power conversion efficiency in an oxide-defined device; progress in dry-etching technology including array fabrication and development of device-quality laser facets suitable for integration. Finally, work in the high-power regime (>5 Watt) will be discussed. This includes broad-area single-emitter lasers emitting 6W cw.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R G Waters, P L Tihanyi, D S Hill, and B A Soltz "Progress In Single Quantum Well Structures For High Power Laser Device Applications", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944363
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum wells

Continuous wave operation

High power lasers

Etching

Diodes

Semiconductor lasers

Binary data

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