27 June 1988 Molecular Characterization Of Structure And Bonding In Thin Film Materials
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Proceedings Volume 0895, Laser Optics for Intracavity and Extracavity Applications; (1988) https://doi.org/10.1117/12.944445
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
The application of Raman spectroscopy to the analysis of dielectric films with respect to phase composition and homogeneity has been reported during the past several years. Interfacial strain at the film-substrate interface, which influences chemical bonding, also perturbs the vibrational spectrum and can be quantified from measured frequency shifts. Recent work has shown that this inelastic light scattering technique can be used as an in situ probe of chemical bonding during film deposition and under conditions where the film undergoes catastrophic degradation caused by high energy particle or high pulse energy laser irradiation. Examples will be presented in this review which demonstrate the utility of this technique for understanding molecular structural changes which result during sol-gel or plasma processing of films. Real-time measurements of thin films subjected to high temperature and pressure environments will also be emphasized.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory J Exarhos, Gregory J Exarhos, } "Molecular Characterization Of Structure And Bonding In Thin Film Materials", Proc. SPIE 0895, Laser Optics for Intracavity and Extracavity Applications, (27 June 1988); doi: 10.1117/12.944445; https://doi.org/10.1117/12.944445

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