27 June 1988 Nonlinear Optical Properties Of Strained GaAs-InxGa1-xAs Multiple Quantum Well Structures Using A Titanium Sapphire Laser Probe
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Proceedings Volume 0895, Laser Optics for Intracavity and Extracavity Applications; (1988) https://doi.org/10.1117/12.944440
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
The nonlinear saturation of the excitonic absorbtion in a GaAs-InxGa 1-xAs multiple quantum well sample consisting of 80 wells was investigated in the vicinity of the excitonic resonance at 991 nm using a tuneable titanium sapphire laser probe. This characterization yields a saturation intensity s of less than 50 kW/cm and a maximum off-resonance nonlinear refractive index of 6.42 x 10-7 cm2/W. It is shown that this dispersion can lead to practical optically bistable etalons fabricated from these multiple quantum well structures.
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K Aron, G Hansen, R Stone, R Lytel, W W Anderson, "Nonlinear Optical Properties Of Strained GaAs-InxGa1-xAs Multiple Quantum Well Structures Using A Titanium Sapphire Laser Probe", Proc. SPIE 0895, Laser Optics for Intracavity and Extracavity Applications, (27 June 1988); doi: 10.1117/12.944440; https://doi.org/10.1117/12.944440
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