27 June 1988 Optical Damage Protector Based On Self-Defocusing In Semiconductors
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Proceedings Volume 0895, Laser Optics for Intracavity and Extracavity Applications; (1988) https://doi.org/10.1117/12.944448
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
We report the careful characterization of a passive monolithic ZnSe based optical fluence limiter that, in addition to protecting downstream optical components, also exhibits self-protection. The output energy is held to below 3 nJ using 30 ps 532 nm pulses while the low energy transmission is greater than 10% . This device has a useful wavelength range from 500 - 950 nm.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E W Van Stryland, E W Van Stryland, M J Soileau, M J Soileau, D J Hagan, D J Hagan, Y Y Wu, Y Y Wu, } "Optical Damage Protector Based On Self-Defocusing In Semiconductors", Proc. SPIE 0895, Laser Optics for Intracavity and Extracavity Applications, (27 June 1988); doi: 10.1117/12.944448; https://doi.org/10.1117/12.944448
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