Ultra-Violet Confocal Metrology

Simon D Bennett; Eric A Peltzer; Ian R Smith

doi:10.1117/12.944516

12 July 1988 Ultra-Violet Confocal Metrology

Simon D Bennett, Eric A Peltzer, Ian R Smith

Proceedings Volume 0897, Scanning Microscopy Technologies and Applications; (1988) https://doi.org/10.1117/12.944516
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

This paper describes a semiconductor metrology system based upon ultra-violet wavelength confocal microscopy. The system is capable of linear metrology of resist features down to 0.5 microns linewidth with low dependence on substrate type. Short term precision of better than 5nm standard deviation can be obtained with this system. The optical design for 325nm operation is described together with details of the data acquisition system. Experimental data compares the performance of ultra-violet and visible light versions of the system for resist metrology, showing the benefit of using a wavelength at which the resist is absorbent. Conclusions are drawn about optimal regimes for metrology as well as the extension of this technology to yet shorter ultra-violet wavelengths.

Citation Download Citation

Simon D Bennett, Eric A Peltzer, and Ian R Smith "Ultra-Violet Confocal Metrology", Proc. SPIE 0897, Scanning Microscopy Technologies and Applications, (12 July 1988); https://doi.org/10.1117/12.944516

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