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2 June 1988 Transverse Mode Stabilized 670Nm Atgainp Visible-Light Laser Diodes
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Proceedings Volume 0898, Miniature Optics and Lasers; (1988) https://doi.org/10.1117/12.944576
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Transverse mode stabilized AIGaInP visible light laser diodes are described and their high power operations are discussed. The laser structure applied for transverse mode stabilization is a ridge shape self-aligned structure, which is designed taking fabrication reproducibility into consideration. A very thin GaInP etching stopper layer is introduced in order to enable easy and accurate control of the dimensions of the self-aligned structure. Threshold current is about 30-50mA. Over 10mW output power is obtained for LDs with as-cleaved facets. Output power is limited by COD (catastrophic optical damage). COD power level under continuous-wave (cw) operation is estimated to be 1.4-1.7MW/cm2. After facet-coating, a stable fundamental mode operation, up to 20mw (cw), and maximum output power 31mW (cw), which is limited by COD, have been obtained. The lasing wavelength is 670nm.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenichi Kobayashi, Seiji Kawata, Hiroaki Fujii, Isao Hino, Akiko Gomyo, Hiiosh Hotta, and Tohru Suzuki "Transverse Mode Stabilized 670Nm Atgainp Visible-Light Laser Diodes", Proc. SPIE 0898, Miniature Optics and Lasers, (2 June 1988); https://doi.org/10.1117/12.944576
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