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3 October 1988 Comprehensive Model For HgCdTe Photoconductor Sensitivity
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Abstract
Model for HgCdTe photoconductor sensitivity was constructed by solving a three dimensional (3-D) transport equation. The model takes into account recombination velocities at crystal side walls and surfaces, device temperature rise due to bias current Joule heat and temperature dependence of ambipolar mobility. Parameters, i.e., recombination velocity at crystal side wall, minority carrier bulk lifetime and majority carrier concentration were fixed by comparing the measured responsivity and carrier lifetime with the calculated responsivity and carrier lifetime. Using parameters thus fixed, noise was calculated and was compared with the measured noise. Good agreement between the calculated and the measured noises was obtained.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N Oda "Comprehensive Model For HgCdTe Photoconductor Sensitivity", Proc. SPIE 0915, Recent Developments in Infrared Components and Subsystems, (3 October 1988); https://doi.org/10.1117/12.945533
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