1 January 1988 A Novel Silicon-Containing Resist For A Bi-Layer Resist System
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Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988); doi: 10.1117/12.968316
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States
Abstract
A new positive working photoresist which is applicable to the bi-layer resist system using a current g-line stepper has been developed. This resist consists of a naphthoquinone diazide photoactive compound and a silicon containing novolak resin, which is synthesised from phenols with siloxane groups(-Si-O-), and formaldehyde by condensation reaction. The Si-containing resist has a resolution capability of 0.5μm L/S with a g-line sensitivity about 250 mJ/cm2, and a high resistance to oxygen plasma, with an etching rate ratio of 61:1(photoresist/Si resist). 0.5μm L/S pattern was precisely transferred to the bottom layer by 02 RIE with vertical side walls.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Noguchi, Keiichi Nito, Jun'etsu Seto, Izumi Hata, Hiroshi Sato, Toshirou Tsumori, "A Novel Silicon-Containing Resist For A Bi-Layer Resist System", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968316; https://doi.org/10.1117/12.968316
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KEYWORDS
Silicon

Etching

Reactive ion etching

Picture Archiving and Communication System

Photoresist materials

Polymers

Plasma etching

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