1 January 1988 Heat Developable Resist For Multilayer Resist Technology
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Abstract
A novel, positive working, silicon-containing resist was developed for use in multilayer resist technology. The complexity of multilayer systems could successfully be reduced due to the dry development behaviour of the resist. Besides, the resist shows very high sensitivity on exposure to deep-UV radiation. Using appropriate sensitizers, the resist is also highly sensitive to g-, h- and i-line exposure, thus making the application in todays optical lithography possible. Submicron resolution could easily be achieved. Thanks to the high silicon content, resist structures were truly transferred into a planarizer resin by reactive ion etching in an oxygen plasma.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfred Steinmann, Alfred Steinmann, } "Heat Developable Resist For Multilayer Resist Technology", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968296; https://doi.org/10.1117/12.968296
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