1 January 1988 High Resolution Imaging Over Severe Metal Topography Using Dyed Image Reversal Resist
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This work evaluates the performance of an Image Reversal (Im.Re.) resist with dye added (0-1% by weight) in order to minimize reflectivity effects over aluminum topographies. Planarization over 1-1.5 μm. aluminum steps is studied as a function of viscosity using Im.Re. dyed resist. It is shown that Im.Re. process performance is not only influenced by dye concentration and exposure energies, but it is also significantly affected by the resist composition. High plasma selectivity and sidewall profiles of 85 degrees or higher are obtained with 1.2 μm. coating thickness, resolving 1 μm. 1/s geometries and lower, with limiting resolution, over topography, of Im.Re. dyed resist established in the 0.7-0.9 μm. region.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Giorgio A. L. M Degiorgis, Giorgio A. L. M Degiorgis, Mauro G. G Calzavara, Mauro G. G Calzavara, "High Resolution Imaging Over Severe Metal Topography Using Dyed Image Reversal Resist", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968313; https://doi.org/10.1117/12.968313


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