1 January 1988 Lithographic, Photochemical And O2 RIE Properties Of Three Polysilane Copolymers
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Polysilanes are high Si-content polymers containing backbone Si-Si bonds. Their high Si content makes them very resistant to removal by 02 reactive ion etching (RIE) while their Si-Si bonding results in strong transitions in the mid- and deep-UV regions. Mid-UV photolysis causes chain scission, a process used by IBM workers in two lithographic applications: as imaging layers in organometallic bilevel, 02-RIE-developed resistsl and as contrast enhancement materials for imaging with positive photoresists.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary N. Taylor, Gary N. Taylor, Molly Y. Hellman, Molly Y. Hellman, Thomas M. Wolf, Thomas M. Wolf, John M. Zeigler, John M. Zeigler, } "Lithographic, Photochemical And O2 RIE Properties Of Three Polysilane Copolymers", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968329; https://doi.org/10.1117/12.968329

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