1 January 1988 Lithographic, Photochemical And O2 RIE Properties Of Three Polysilane Copolymers
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Abstract
Polysilanes are high Si-content polymers containing backbone Si-Si bonds. Their high Si content makes them very resistant to removal by 02 reactive ion etching (RIE) while their Si-Si bonding results in strong transitions in the mid- and deep-UV regions. Mid-UV photolysis causes chain scission, a process used by IBM workers in two lithographic applications: as imaging layers in organometallic bilevel, 02-RIE-developed resistsl and as contrast enhancement materials for imaging with positive photoresists.
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Gary N. Taylor, Gary N. Taylor, Molly Y. Hellman, Molly Y. Hellman, Thomas M. Wolf, Thomas M. Wolf, John M. Zeigler, John M. Zeigler, } "Lithographic, Photochemical And O2 RIE Properties Of Three Polysilane Copolymers", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968329; https://doi.org/10.1117/12.968329
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