Paper
1 January 1988 Novolak Design For High Resolution Positive Photoresists(II): Stone Wall Model For Positive Photoresist Development
M. Hanabata, Y. Uetani, A. Furuta
Author Affiliations +
Abstract
The relationship between the molecular weight distribution(Mw/Mn) of novolak resins and performance of positive photoresists was investigated from the standpoint of the image formation process. Dissolution rates were measured on photoresists containing cresol-novolak resins having various Mw/Mn values. It was found that there is an optimum Mw/Mn value to exhibit high resolution capabilities. On the basis of experimental results, we discuss the roles of high molecular weight components and low molecular weight components of novolak resins in resist performance. Finally, we propose a new model for positive photoresist development---"Stone wall model", which is consistent with our azocoupling model for the dissolution inhibition mechanism. This model is applicable to design novolak resins for high resolution positive photoresists.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Hanabata, Y. Uetani, and A. Furuta "Novolak Design For High Resolution Positive Photoresists(II): Stone Wall Model For Positive Photoresist Development", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968335
Lens.org Logo
CITATIONS
Cited by 16 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photoresist materials

Photoresist developing

Manganese

Image processing

Image acquisition

Molecules

Radon

Back to Top