1 January 1988 Thermal Crosslinking By Unexposed Naphthoquinone Diazides As Diffusion Inhibition Mechanism In The DESIRE Process
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Abstract
The DESIRE process is based on a selective silylation of the exposed areas of the resist. We demonstrated earlier that this selective silylation is caused by a selective differentiation in diffusion rate of the silylating agent into the exposed areas. The naphthoquinone diazide, which is a vital component of the resist, seems to block the diffusion of the silylating agent very efficiently as long as it is not exposed. The exposed diazoquinone on the other hand will enhance the diffusion, thus resulting in a high differentiation in diffusion rate in exposed versus unexposed areas. An earlier study carried out by researchers at Philips showed that polyfunctional diazoquinone esters were more efficient in creating high selectivity than the monofunctional analogs. This was explained in terms of hydrogen bridge formation in the unexposed areas. We now have found that part of the effect is probably due to thermal crosslinking of unexposed naphthoquinone diazide during the baking time that proceeds the actual silylation. This silylation is typically carried out at 120-160°C and it was found that the time and temperature of the presilylation bake have an important influence on the required silylation time and the obtained contrast. It was also found that, after prolonged baking before the silylation, the diffusion of the silylating agent into the resist becomes slower and better selectivity, profiles and process latitude are obtained.
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B. Roland, J. Vandendriessche, R. Lombaerts, B. Denturck, C. Jakus, "Thermal Crosslinking By Unexposed Naphthoquinone Diazides As Diffusion Inhibition Mechanism In The DESIRE Process", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); doi: 10.1117/12.968309; https://doi.org/10.1117/12.968309
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