An Improved Fluorescence Technique For Optical Measurements Below One Micron

Stephen Williams; Vincent Coates; Roger Ingalls

doi:10.1117/12.968360

1 January 1988 An Improved Fluorescence Technique For Optical Measurements Below One Micron

Stephen Williams, Vincent Coates, Roger Ingalls

Proceedings Volume 0921, Integrated Circuit Metrology, Inspection, and Process Control II; (1988) https://doi.org/10.1117/12.968360
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

Because of their convenience, reliability and moderate cost, it is desirable to extend the measurement capability of optical methods during integrated circuit manufacture as far as theoretically possible into the submicron range. Critical dimensions on photoresist as small as 0.4 micron have been measured with good precision using optical fluorescence microscopy. In addition, using new, recently developed algorithms, etched wafer features below one micron have been measured reliably using briqhtfield techniques.

Citation Download Citation

Stephen Williams, Vincent Coates, and Roger Ingalls "An Improved Fluorescence Technique For Optical Measurements Below One Micron", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968360

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