1 January 1988 An Improved Fluorescence Technique For Optical Measurements Below One Micron
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Abstract
Because of their convenience, reliability and moderate cost, it is desirable to extend the measurement capability of optical methods during integrated circuit manufacture as far as theoretically possible into the submicron range. Critical dimensions on photoresist as small as 0.4 micron have been measured with good precision using optical fluorescence microscopy. In addition, using new, recently developed algorithms, etched wafer features below one micron have been measured reliably using briqhtfield techniques.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen Williams, Vincent Coates, Roger Ingalls, "An Improved Fluorescence Technique For Optical Measurements Below One Micron", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968360; https://doi.org/10.1117/12.968360
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