1 January 1988 An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length
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Abstract
An improved SEM technique to determine MOS transistor effective channel length is described. The technique utilizes two different chemical etchants under strong illumination to selectively stain/etch the doped regions of the device. Comparison of the SEM measurements to data provided by two different electrical measurement methods shows good agreement (within 0.1 μm).
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin P. Karnett, Robert E. Dunham, "An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968392; https://doi.org/10.1117/12.968392
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