1 January 1988 An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length
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Abstract
An improved SEM technique to determine MOS transistor effective channel length is described. The technique utilizes two different chemical etchants under strong illumination to selectively stain/etch the doped regions of the device. Comparison of the SEM measurements to data provided by two different electrical measurement methods shows good agreement (within 0.1 μm).
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin P. Karnett, Martin P. Karnett, Robert E. Dunham, Robert E. Dunham, } "An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968392; https://doi.org/10.1117/12.968392
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