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1 January 1988 Characterization Of Submicron Contact Holes Reproduced In Thick Resist By High Numerical Aperture Lenses
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Abstract
Submicron contact holes in 1.5 μm resist have been characterized using direct SEM measurement and using hole transfer into polysilicon by reactive ion etching. The performance of these measurement techniques is examined as well as the full-field performance of three g-line reduction lenses with numerical apertures equal to .35, .42, and .45. This performance includes resist slope and shape for contacts from 0.7 to 1.2 m in size, reproduced with optimized process and exposure.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Lee, John T. Lyon, John H. McCoy, and Gil L. Varnell "Characterization Of Submicron Contact Holes Reproduced In Thick Resist By High Numerical Aperture Lenses", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968379
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