1 January 1988 Confocal Optical Metrology At 325nm
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This paper compares results obtained with semiconductor metrology systems based upon ultra-violet and visible wavelength confocal microscopy. It is shown that the system is capable of linear metrology of resist features down to 0.5 micron linewidth with low dependence on substrate type. Short term precision of better than 5nm standard deviation can be obtained with this system. Experimental data compares the performance of ultra-violet and visible light versions of the system for resist metrology, showing the benefit of using a wavelength at which the resist is absorbent.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Simon D. Bennett, Simon D. Bennett, Eric A. Peltzer, Eric A. Peltzer, Joan McCall, Joan McCall, Richard DeRosa, Richard DeRosa, Ian R. Smith, Ian R. Smith, } "Confocal Optical Metrology At 325nm", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); doi: 10.1117/12.968355; https://doi.org/10.1117/12.968355


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