Optical Measurement Of Half Micron Critical Dimensions

M. Hamashima; K. Kato; T. Ishizeki

doi:10.1117/12.968356

1 January 1988 Optical Measurement Of Half Micron Critical Dimensions

M. Hamashima, K. Kato, T. Ishizeki

Proceedings Volume 0921, Integrated Circuit Metrology, Inspection, and Process Control II; (1988) https://doi.org/10.1117/12.968356
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

The measurement of critical dimensions (CDs) as small as 0.5 μm is essential to the characterization and control of submicron optical lithography. This paper describes a newly developed system using an ultraviolet laser and the results which have been obtained on various photoresist images, etched patterns, and substrates. A plot of these optical measurements versus SEM measurements shows an offset as expected. However, the data has an excellent linear relation down to below 0.5 um in all the samples above. The excellent results of the resist measurement come from not only the high resolution, but the reduction of the interference effect.

Citation Download Citation

M. Hamashima, K. Kato, and T. Ishizeki "Optical Measurement Of Half Micron Critical Dimensions", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968356

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